Tokyo Electron Limited TEL STAR100
Introduction to TEL STAR100
The TEL STAR100 is a state-of-the-art semiconductor production equipment developed by Tokyo Electron Limited, a leading Japanese electronics and semiconductor company. The TEL STAR100 is designed to meet the growing demands of advanced semiconductor manufacturing, providing a robust platform for high-speed processing and precise control.Architecture and Design
The TEL STAR100's architecture is based on a modular design, allowing for easy maintenance and upgrade. The system consists of multiple modules, each with its own specific function, such as substrate handling, processing, and inspection. The modular design enables the TEL STAR100 to be highly configurable, making it suitable for a wide range of semiconductor manufacturing applications.Technical Specifications
The following table provides a summary of the TEL STAR100's technical specifications:Performance and Benchmarking
The TEL STAR100 has been extensively benchmarked and tested to ensure its performance and reliability. The system has demonstrated high-speed processing capabilities, precise control, and excellent uniformity. The TEL STAR100's performance has been compared to other semiconductor production equipment, and it has shown superior results in terms of throughput, yield, and cost-effectiveness.
What is the substrate size that the TEL STAR100 can handle?
The TEL STAR100 can handle substrates up to 300mm in size.
What is the processing temperature range of the TEL STAR100?The TEL STAR100 can process substrates at temperatures up to 400°C.
What is the precision control of the TEL STAR100?The TEL STAR100 has a precision control of ±0.1°C and ±1% gas flow rate.
What is the throughput of the TEL STAR100?The TEL STAR100 has a throughput of up to 100 wafers per hour.
What is the electrical power consumption of the TEL STAR100?The TEL STAR100 has an electrical power consumption of up to 100 kW.
Specifications
| Specification | Description |
|---|---|
| Substrate Size | Up to 300mm |
| Processing Temperature | Up to 400°C |
| Process Pressure | Up to 10^-9 Torr |
| Gas Flow Rate | Up to 1000 sccm |
| Precision Control | ±0.1°C, ±1% gas flow rate |
| Throughput | Up to 100 wafers per hour |
| Electrical Power | Up to 100 kW |
| Dimension | 4500 x 2500 x 3000 mm |